APT66M60B2 |
Part Number | APT66M60B2 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 90mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance a... |
Features |
·Static Drain-Source On-Resistance : RDS(on) = 90mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 66 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 1135 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storag... |
Document |
APT66M60B2 Data Sheet
PDF 235.07KB |
Similar Datasheet
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