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3DA608 |
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| Part Number | 3DA608 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE: 20-180@IC= 7.5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an o... |
| Features |
HARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(BR) Collector-Emitter Breakdown Voltage IC=10mA; IB=0
VCE(sat) Collector-Emitter Saturation Voltage IC=5A;IB=0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC=5A;IB=0.5A
3DA608A 3DA608B 3DA608C 3DA608D 3DA608E 3DA608F 3DA608A 3DA608B 3DA608C 3DA608D 3DA608E 3DA608F 3DA608A 3DA608B 3DA608C 3DA608D 3DA608E 3DA608F
ICBO
Collector-Base Cutoff Current
VCB=20V; IE=0
MIN TYP MAX UNIT
30
50
80 100
V
150
200
1
0.5
0.5 0.5
V
0.5
0.5
2
1.4
1.4 1.4
V
1.4
1.4
2
mA
ICEO
Collector-Collector Cuto... |
| Document |
 3DA608 Data Sheet
PDF 238.81KB |
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Desde 2024. D4U Semiconductor.
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