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2SJ526 |
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| Part Number | 2SJ526 |
| Manufacturer | INCHANGE |
| Description | isc P-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 110mΩ@10V ·Fast Switching Speed ·Low drive current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d... |
| Features |
· Drain-source on-resistance: RDS(on) ≤ 110mΩ@10V ·Fast Switching Speed ·Low drive current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -12 A IDM Drain Current-Single Pulsed -48 A PD Total Dissipation @TC=25℃ 25 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SJ526 i... |
| Document |
 2SJ526 Data Sheet
PDF 250.03KB |
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Desde 2024. D4U Semiconductor.
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