2SA1943N INCHANGE PNP Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2SA1943N

INCHANGE
2SA1943N
2SA1943N 2SA1943N
zoom Click to view a larger image
Part Number 2SA1943N
Manufacturer INCHANGE
Description ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Complement to Type 2SC5200N ·Minimum Lot-to-Lot variations for robust device perform...
Features V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8.0A; IB=- 0.8A VBE(on) Base-Emitter On Voltage IC= -7A ; VCE=-5V ICBO Collector Cutoff Current VCB= -230V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A ; VCE= -5V hFE-2 DC Current Gain IC= -7A ; VCE= -5V 2SA1943N MIN TYP. MAX UNIT -230 V -3.0 V -1.5 V -5 μA -5 μA 80 160 35 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information containe...

Document Datasheet 2SA1943N Data Sheet
PDF 210.28KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SA1943
Toshiba Semiconductor
Silicon PNP Transistor Datasheet
2 2SA1943
UTC
PNP SILICON TRANSISTOR Datasheet
3 2SA1943
Fairchild Semiconductor
PNP Epitaxial Silicon Transistor Datasheet
4 2SA1943
Inchange Semiconductor
POWER TRANSISTOR Datasheet
5 2SA1943
Thinki Semiconductor
150 Watt Silicon PNP Power Transistors Datasheet
6 2SA1943A
JILIN SINO
PNP Epitaxial Silicon Transistor Datasheet
More datasheet from INCHANGE
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad