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BUZ202 |
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| Part Number | BUZ202 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel Mosfet Transistor BUZ202 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-t... |
| Features |
·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power . ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Cur... |
| Document |
 BUZ202 Data Sheet
PDF 219.48KB |
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Desde 2024. D4U Semiconductor.
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