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SPP21N50C3 |
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| Part Number | SPP21N50C3 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor SPP21N50C3，ISPP21N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤190mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot ... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤190mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·New revolutionary high voltage technology ·Ultra low effective capacitance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 21 IDM Drain Current-Single Pulsed 63 PD Total Dissipation @TC=25℃ 208 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~15... |
| Document |
 SPP21N50C3 Data Sheet
PDF 243.17KB |
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