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SPP11N65C3 |
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| Part Number | SPP11N65C3 |
| Manufacturer | INCHANGE |
| Description | ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Con... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 33 PD Total Dissipation @TC=25℃ 125 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ... |
| Document |
 SPP11N65C3 Data Sheet
PDF 243.13KB |
Similar Datasheet
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| 1 | SPP11N65C3 |
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| 2 | SPP11N60C2 |
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| 3 | SPP11N60C3 |
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| 4 | SPP11N60C3 |
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Desde 2024. D4U Semiconductor.
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