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SPP06N60C3 |
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| Part Number | SPP06N60C3 |
| Manufacturer | INCHANGE |
| Description | ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Con... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤0.75Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6.2 IDM Drain Current-Single Pulsed 18.6 PD Total Dissipation @TC=25℃ 74 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ... |
| Document |
 SPP06N60C3 Data Sheet
PDF 243.49KB |
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Desde 2024. D4U Semiconductor.
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