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SPP02N60S5 |
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| Part Number | SPP02N60S5 |
| Manufacturer | INCHANGE |
| Description | ·Ultra low gate charge ·Ultra low effective capacitance ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Volta... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤3Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·Ultra low effective capacitance ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 1.8 IDM Drain Current-Single Pulsed 32 PD Total Dissipation @TC=25℃ 25 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -... |
| Document |
 SPP02N60S5 Data Sheet
PDF 241.91KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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