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SPD50N03S2 |
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| Part Number | SPD50N03S2 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor SPD50N03S2,ISPD50N03S2 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤7.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust... |
| Features |
·Static drain-source on-resistance: RDS(on)≤7.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Superior thermal resistance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 200 PD Total Dissipation @TC=25℃ 136 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER R... |
| Document |
 SPD50N03S2 Data Sheet
PDF 239.39KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SPD50N03S2-07 |
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| 2 | SPD50N03S2-07G |
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| 3 | SPD50N03S2L-06 |
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| 4 | SPD50N06S2-14 |
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| 5 | SPD50N06S2L-13 |
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| 6 | SPD50N06S2L-13 |
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Desde 2024. D4U Semiconductor.
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