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SPD02N80C3 |
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| Part Number | SPD02N80C3 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor SPD02N80C3,ISPD02N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.7Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust ... |
| Features |
·Static drain-source on-resistance: RDS(on)≤2.7Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 2 IDM Drain Current-Single Pulsed 6 PD Total Dissipation @TC=25℃ 42 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(... |
| Document |
 SPD02N80C3 Data Sheet
PDF 238.74KB |
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Desde 2024. D4U Semiconductor.
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