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SCT3060 |
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| Part Number | SCT3060 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel SiC SMOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤78mΩ ·Fast switching speed ·Fast reverse recovery ·100% avalanche tested ·Minimum Lot-to-Lot variations for ... |
| Features |
·Static drain-source on-resistance: RDS(on)≤78mΩ ·Fast switching speed ·Fast reverse recovery ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC/DC converters ·Switch mode power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage -4~22 ID Drain Current-Continuous 39 IDM Drain Current-Single Pulsed 97 PD Total Dissipation @TC=25℃ 165 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·T... |
| Document |
 SCT3060 Data Sheet
PDF 238.29KB |
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Desde 2024. D4U Semiconductor.
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