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RJK6015DPK |
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| Part Number | RJK6015DPK |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.36Ω(Max) ·Fast Switching ·Minimum Lo... |
| Features |
·Drain Current ID= 21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.36Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS · Low on-resistance · Low leakage current · High speed switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 21 A IDM Drain Current-Single Plused 63 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junct... |
| Document |
 RJK6015DPK Data Sheet
PDF 229.03KB |
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Desde 2024. D4U Semiconductor.
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