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IRLR6225 |
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| Part Number | IRLR6225 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IRLR6225, IIRLR6225 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.0mΩ(VGS=4.5V) RDS(on)≤5.2mΩ(VGS=2.5V) ·Enhancement mode: ·100% avalanche tested ·Minimum L... |
| Features |
·Static drain-source on-resistance: RDS(on)≤4.0mΩ(VGS=4.5V) RDS(on)≤5.2mΩ(VGS=2.5V) ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Battery protection switch ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 20 VGS Gate-Source Voltage ±12 ID Drain Current-Continuous 100 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 63 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARA... |
| Document |
 IRLR6225 Data Sheet
PDF 237.31KB |
Similar Datasheet
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| 1 | IRLR6225PbF |
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| 2 | IRLR6225TRPbF |
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Desde 2024. D4U Semiconductor.
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