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IRFR120N |
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| Part Number | IRFR120N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IRFR120N, IIRFR120N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤210mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de... |
| Features |
·Static drain-source on-resistance: RDS(on)≤210mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9.4 IDM Drain Current-Single Pulsed 38 PD Total Dissipation @TC=25℃ 48 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Chann... |
| Document |
 IRFR120N Data Sheet
PDF 237.63KB |
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Desde 2024. D4U Semiconductor.
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