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IRF3415 |
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| Part Number | IRF3415 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IRF3415，IIRF3415 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤42mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variat... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤42mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Combine with the fast switching speed and ruggedized device design ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 43 IDM Drain Current-Single Pulsed 150 PD Total Dissipation @TC=25℃ 200 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT ... |
| Document |
 IRF3415 Data Sheet
PDF 240.40KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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