IPW65R190E6 INCHANGE N-Channel MOSFET Datasheet. existencias, precio

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IPW65R190E6

INCHANGE
IPW65R190E6
IPW65R190E6 IPW65R190E6
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Part Number IPW65R190E6
Manufacturer INCHANGE
Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤190mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and ...
Features
·Static drain-source on-resistance: RDS(on)≤190mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Fast Switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20.2 IDM Drain Current-Single Pulsed 66 PD Total Dissipation @TC=25℃ 151 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Cha...

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