Busque con el número de pieza junto con el fabricante o la descripción
IPW60R299CP |
Click to view a larger image
| Part Number | IPW60R299CP |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤299mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and ... |
| Features |
·Static drain-source on-resistance: RDS(on)≤299mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 34 PD Total Dissipation @TC=25℃ 96 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER R... |
| Document |
 IPW60R299CP Data Sheet
PDF 238.13KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPW60R299CP |
Infineon Technologies |
CoolMOS Power Transistor |
|
| 2 | IPW60R230P6 |
Infineon |
MOSFET |
|
| 3 | IPW60R250CP |
Infineon Technologies |
Power Transistor |
|
| 4 | IPW60R250CP |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPW60R280C6 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IPW60R280C6 |
Infineon Technologies |
MOSFET |
|
Desde 2024. D4U Semiconductor.
|