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IPP110N20N3 |
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| Part Number | IPP110N20N3 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IPP110N20N3，IIPP110N20N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 88 IDM Drain Current-Single Pulsed 352 PD Total Dissipation @TC=25℃ 300 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V ... |
| Document |
 IPP110N20N3 Data Sheet
PDF 241.12KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPP110N20N3 |
Infineon |
Power-Transistor |
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| 2 | IPP110N20N3G |
Infineon Technologies |
Power Transistor |
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| 3 | IPP110N20NA |
Infineon |
Power-Transistor |
|
| 4 | IPP110N20NA |
INCHANGE |
N-Channel MOSFET |
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| 5 | IPP110N06L |
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| 6 | IPP110N06LG |
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Power-Transistor |
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Desde 2024. D4U Semiconductor.
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