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IPP60R080P7 |
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| Part Number | IPP60R080P7 |
| Manufacturer | INCHANGE |
| Description | ·Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤0.08Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 37 IDM Drain Current-Single Pulsed 110 PD Total Dissipation @TC=25℃ 129 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature ... |
| Document |
 IPP60R080P7 Data Sheet
PDF 241.12KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPP60R080P7 |
Infineon |
MOSFET |
|
| 2 | IPP60R040C7 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPP60R040C7 |
Infineon |
MOSFET |
|
| 4 | IPP60R060C7 |
Infineon |
MOSFET |
|
| 5 | IPP60R060C7 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IPP60R060P7 |
Infineon |
MOSFET |
|
Desde 2024. D4U Semiconductor.
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