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IPD079N06L3 |
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| Part Number | IPD079N06L3 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IPD079N06L3，IIPD079N06L3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤7.9mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus... |
| Features |
·Static drain-source on-resistance: RDS(on)≤7.9mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 200 PD Total Dissipation @TC=25℃ 79 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j... |
| Document |
 IPD079N06L3 Data Sheet
PDF 238.93KB |
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Desde 2024. D4U Semiconductor.
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