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IPD075N03L |
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| Part Number | IPD075N03L |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IPD075N03L, IIPD075N03L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤7.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust... |
| Features |
·Static drain-source on-resistance: RDS(on)≤7.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 350 PD Total Dissipation @TC=25℃ 47 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channe... |
| Document |
 IPD075N03L Data Sheet
PDF 236.77KB |
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Desde 2024. D4U Semiconductor.
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