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IPD60R380P6 |
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| Part Number | IPD60R380P6 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IPD60R380P6,IIPD60R380P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus... |
| Features |
·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for hard and soft switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 10.6 IDM Drain Current-Single Pulsed 29 PD Total Dissipation @TC=25℃ 83 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PA... |
| Document |
 IPD60R380P6 Data Sheet
PDF 238.28KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD60R380P6 |
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MOSFET |
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| 2 | IPD60R380C6 |
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| 3 | IPD60R380C6 |
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| 4 | IPD60R380E6 |
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| 5 | IPD60R380E6 |
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| 6 | IPD60R385CP |
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Desde 2024. D4U Semiconductor.
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