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IPD050N10N5 |
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| Part Number | IPD050N10N5 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IPD050N10N5,IIPD050N10N5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust ... |
| Features |
·Static drain-source on-resistance: RDS(on)≤5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 320 PD Total Dissipation @TC=25℃ 150 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j... |
| Document |
 IPD050N10N5 Data Sheet
PDF 237.77KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | IPD050N10N5 |
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| 2 | IPD050N03L |
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| 3 | IPD050N03L |
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| 4 | IPD050N03LG |
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Desde 2024. D4U Semiconductor.
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