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IPD025N06N |
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| Part Number | IPD025N06N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IPD025N06N, IIPD025N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust... |
| Features |
·Static drain-source on-resistance: RDS(on)≤2.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Optimized for synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 90 IDM Drain Current-Single Pulsed 360 PD Total Dissipation @TC=25℃ 167 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL ... |
| Document |
 IPD025N06N Data Sheet
PDF 237.95KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD025N06N |
Infineon |
MOSFET |
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| 2 | IPD029N04NF2S |
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| 3 | IPD031N03L |
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| 4 | IPD031N03L |
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| 5 | IPD031N03LG |
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| 6 | IPD031N06L3 |
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Desde 2024. D4U Semiconductor.
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