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IPA180N10N3 |
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| Part Number | IPA180N10N3 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IPA180N10N3,IIPA180N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤18mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-... |
| Features |
·Low drain-source on-resistance: RDS(on) ≤18mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·It is intended for general purpose switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 28 IDM Drain Current-Single Pulsed 112 PD Total Dissipation @TC=25℃ 30 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A... |
| Document |
 IPA180N10N3 Data Sheet
PDF 240.29KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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