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TK39N60W |
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| Part Number | TK39N60W |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device pe... |
| Features |
·With TO-247 packaging ·With low gate drive requirements ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 38.8 IDM Drain Current-Single Pulsed 155 PD Total Dissipation 270 Tj Operating Junction Temperature -50~150 Tstg Storage Temperature -50~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAM... |
| Document |
 TK39N60W Data Sheet
PDF 262.73KB |
Similar Datasheet
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| 1 | TK39N60W |
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| 2 | TK39N60W5 |
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Desde 2024. D4U Semiconductor.
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