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RJK2006DPE |
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| Part Number | RJK2006DPE |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor RJK2006DPE ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variation... |
| Features |
·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 40 100 PD Total Dissipation @TC=25℃ 100 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARAC... |
| Document |
 RJK2006DPE Data Sheet
PDF 258.11KB |
Similar Datasheet
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| 1 | RJK2006DPE |
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Desde 2024. D4U Semiconductor.
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