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PHD55N03 |
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| Part Number | PHD55N03 |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor PHD55N03 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations ... |
| Features |
·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 25 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 55 38 220 PD Total Dissipation @TC=25℃ 103 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHA... |
| Document |
 PHD55N03 Data Sheet
PDF 257.88KB |
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Desde 2024. D4U Semiconductor.
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