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NVD4C05NT4G |
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| Part Number | NVD4C05NT4G |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor NVD4C05NT4G ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variatio... |
| Features |
·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 90 IDM Drain Current-Single Pulsed 395 PD Total Dissipation @TC=25℃ 57 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS ... |
| Document |
 NVD4C05NT4G Data Sheet
PDF 257.75KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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