MMD60R360P |
Part Number | MMD60R360P |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor MMD60R360P ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliabl... |
Features |
·Static drain-source on-resistance: RDS(on)≤0.38Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 33 PD Total Dissipation @TC=25℃ 83 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case t... |
Document |
MMD60R360P Data Sheet
PDF 273.80KB |
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