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IXTK102N30P |
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| Part Number | IXTK102N30P |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor IXTK102N30P ·FEATURES ·With To-3PL package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for... |
| Features |
·With To-3PL package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 300 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 102 IDM Drain Current-Single Pulsed 250 PD Total Dissipation @TC=25℃ 700 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SY... |
| Document |
 IXTK102N30P Data Sheet
PDF 257.51KB |
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Desde 2024. D4U Semiconductor.
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