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IRF3415S |
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| Part Number | IRF3415S |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor IRF3415S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations... |
| Features |
·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 43 30 150 PD Total Dissipation @TC=25℃ 200 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CH... |
| Document |
 IRF3415S Data Sheet
PDF 253.34KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF3415 |
International Rectifier |
Power MOSFET |
|
| 2 | IRF3415 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRF3415L |
International Rectifier |
Power MOSFET |
|
| 4 | IRF3415L |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRF3415LPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRF3415PBF |
International Rectifier |
HEXFET Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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