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IRF1010ES |
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| Part Number | IRF1010ES |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-t... |
| Features |
·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IRF1010ES ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 84 59 330 PD Total Dissipation 200 Tj Operating Junction Temperature 175 Tstg ... |
| Document |
 IRF1010ES Data Sheet
PDF 247.93KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF1010E |
International Rectifier |
Power MOSFET |
|
| 2 | IRF1010E |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRF1010EL |
International Rectifier |
Power MOSFET |
|
| 4 | IRF1010ELPbF |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRF1010EPBF |
International Rectifier |
Power MOSFET |
|
| 6 | IRF1010ES |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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