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IPB107N20N3 |
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| Part Number | IPB107N20N3 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-t... |
| Features |
·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 88 63 352 PD Total Dissipation 300 Tj Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UN... |
| Document |
 IPB107N20N3 Data Sheet
PDF 254.26KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB107N20N3 |
Infineon |
Power-Transistor |
|
| 2 | IPB107N20N3G |
Infineon Technologies |
Power-Transistor |
|
| 3 | IPB107N20NA |
Infineon |
Power-Transistor |
|
| 4 | IPB107N20NA |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPB100N04S2-04 |
Infineon Technologies |
Power-Transistor |
|
| 6 | IPB100N04S2L-03 |
Infineon Technologies |
Power-Transistor |
|
Desde 2024. D4U Semiconductor.
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