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IPB60R360P7 |
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| Part Number | IPB60R360P7 |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor IPB60R360P7 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variati... |
| Features |
·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 9 6 26 PD Total Dissipation @TC=25℃ 41 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARAC... |
| Document |
 IPB60R360P7 Data Sheet
PDF 253.99KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB60R360P7 |
Infineon |
MOSFET |
|
| 2 | IPB60R330P6 |
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MOSFET |
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| 3 | IPB60R330P6 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPB60R380C6 |
Infineon Technologies |
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| 5 | IPB60R380C6 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IPB60R380P6 |
Infineon |
MOSFET |
|
Desde 2024. D4U Semiconductor.
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