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IPB038N12N3G |
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| Part Number | IPB038N12N3G |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor IPB038N12N3G ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variat... |
| Features |
·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 120 480 PD Total Dissipation @TC=25℃ 300 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHAR... |
| Document |
 IPB038N12N3G Data Sheet
PDF 254.43KB |
Similar Datasheet
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| 2 | IPB038N12N3G |
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Desde 2024. D4U Semiconductor.
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