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IPB34CN10N |
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| Part Number | IPB34CN10N |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor IPB34CN10N ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variatio... |
| Features |
·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 27 20 108 PD Total Dissipation @TC=25℃ 58 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHA... |
| Document |
 IPB34CN10N Data Sheet
PDF 254.33KB |
Similar Datasheet
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| 1 | IPB34CN10N |
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| 2 | IPB34CN10NG |
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| 4 | IPB320N20N3G |
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Desde 2024. D4U Semiconductor.
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