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FMH35N60S1FD |
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| Part Number | FMH35N60S1FD |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor FMH35N60S1FD ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for ... |
| Features |
·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 33 22 105 PD Total Dissipation 270 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARA... |
| Document |
 FMH35N60S1FD Data Sheet
PDF 254.23KB |
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Desde 2024. D4U Semiconductor.
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