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TK100E08N1 |
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| Part Number | TK100E08N1 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK100E08N1，ITK100E08N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.2mΩ. (VGS = 10 V) ·Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V,... |
| Features |
·Low drain-source on-resistance: RDS(on) ≤3.2mΩ. (VGS = 10 V) ·Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 100 IDM Drain Current-Single Pulsed 568 PD Total Dissipation @TC=25℃ 255 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A... |
| Document |
 TK100E08N1 Data Sheet
PDF 241.70KB |
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Desde 2024. D4U Semiconductor.
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