Busque con el número de pieza junto con el fabricante o la descripción
TK39A60W |
Click to view a larger image
| Part Number | TK39A60W |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK39A60W，ITK39A60W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.065Ω ·Easy to control Gate switching ·Enhancement mode: Vth = 2.7 to ... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 0.065Ω ·Easy to control Gate switching ·Enhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=1.9mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 38.8 IDM Drain Current-Single Pulsed 155 PD Total Dissipation @TC=25℃ 50 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature ... |
| Document |
 TK39A60W Data Sheet
PDF 248.97KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TK39A60W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | TK3904LLD03 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 3 | TK3904NND03 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 4 | TK3906LLD03 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 5 | TK3906NND03 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 6 | TK39J60W |
Toshiba Semiconductor |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|