Busque con el número de pieza junto con el fabricante o la descripción
TK30A06N1 |
Click to view a larger image
| Part Number | TK30A06N1 |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK30A06N1，ITK30A06N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 12.2mΩ (typ.) (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS ... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 12.2mΩ (typ.) (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.2mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 95 PD Total Dissipation @TC=25℃ 25 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V... |
| Document |
 TK30A06N1 Data Sheet
PDF 248.02KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TK30A06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | TK30A06J3A |
Toshiba Semiconductor |
MOSFET |
|
| 3 | TK30E06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | TK30E06N1 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | TK30J25D |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 6 | TK30J25D |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|