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TK13A25D |
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| Part Number | TK13A25D |
| Manufacturer | INCHANGE |
| Description | iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK13A25D，ITK13A25D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.19Ω (typ.) (VGS = 10 V) ·Enhancement mode: Vth = 1.5 to 3.5V (VDS = 10... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 0.19Ω (typ.) (VGS = 10 V) ·Enhancement mode: Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 52 PD Total Dissipation @TC=25℃ 35 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V... |
| Document |
 TK13A25D Data Sheet
PDF 247.50KB |
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Desde 2024. D4U Semiconductor.
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