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TK12A60U |
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| Part Number | TK12A60U |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK12A60U,ITK12A60U ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.4Ω ·Low leakage current: IDSS = 100μA (max) (VDS = 600 V) ·Enhancemen... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 0.4Ω ·Low leakage current: IDSS = 100μA (max) (VDS = 600 V) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1 mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 35 Tj Max. Operating Junction Temperature 150 Tstg Sto... |
| Document |
 TK12A60U Data Sheet
PDF 247.30KB |
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Desde 2024. D4U Semiconductor.
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