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IRLZ44N |
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| Part Number | IRLZ44N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLZ44N， IIRLZ44N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤22mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·M... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤22mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 47 IDM Drain Current-Single Pulsed 160 PD Total Dissipation @TC=25℃ 110 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ... |
| Document |
 IRLZ44N Data Sheet
PDF 241.07KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRLZ44 |
Samsung semiconductor |
N-Channel MOSFET |
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| 2 | IRLZ44 |
International Rectifier |
Power MOSFET |
|
| 3 | IRLZ44 |
Vishay |
Power MOSFET |
|
| 4 | IRLZ44A |
Samsung semiconductor |
ADVANCED POWER MOSFET |
|
| 5 | IRLZ44N |
International Rectifier |
Power MOSFET |
|
| 6 | IRLZ44NL |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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