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IRL60B216 |
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| Part Number | IRL60B216 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL60B216，IIRL60B216 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche teste... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤1.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 195 IDM Drain Current-Single Pulsed 780 PD Total Dissipation @TC=25℃ 375 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A ... |
| Document |
 IRL60B216 Data Sheet
PDF 241.96KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | IRL60B216 |
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| 4 | IRL60S216 |
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Desde 2024. D4U Semiconductor.
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