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IRL40B212 |
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| Part Number | IRL40B212 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL40B212，IIRL40B212 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche teste... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤1.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 195 IDM Drain Current-Single Pulsed 990 PD Total Dissipation @TC=25℃ 231 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A ... |
| Document |
 IRL40B212 Data Sheet
PDF 241.49KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRL40B212 |
International Rectifier |
Power MOSFET |
|
| 2 | IRL40B215 |
International Rectifier |
Power MOSFET |
|
| 3 | IRL40B215 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IRL40B209 |
International Rectifier |
Power MOSFET |
|
| 5 | IRL40S212 |
International Rectifier |
Power MOSFET |
|
| 6 | IRL40S212 |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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