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IRFB3307 |
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| Part Number | IRFB3307 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3307， IIRFB3307 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤6.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 130 IDM Drain Current-Single Pulsed 510 PD Total Dissipation @TC=25℃ 250 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A ... |
| Document |
 IRFB3307 Data Sheet
PDF 241.23KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFB3306 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IRFB3306GPbF |
International Rectifier |
Power MOSFET |
|
| 3 | IRFB3306PBF |
International Rectifier |
Power MOSFET |
|
| 4 | IRFB3307 |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRFB3307PbF |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRFB3307Z |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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