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IRF3205Z |
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| Part Number | IRF3205Z |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205Z，IIRF3205Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤6.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 440 PD Total Dissipation @TC=25℃ 170 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W... |
| Document |
 IRF3205Z Data Sheet
PDF 241.59KB |
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Desde 2024. D4U Semiconductor.
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