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IRF1010E |
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| Part Number | IRF1010E |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010E， IIRF1010E ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 84 IDM Drain Current-Single Pulsed 330 PD Total Dissipation @TC=25℃ 200 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ... |
| Document |
 IRF1010E Data Sheet
PDF 241.34KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF1010 |
nELL |
N-Channel Power MOSFET |
|
| 2 | IRF1010E |
International Rectifier |
Power MOSFET |
|
| 3 | IRF1010EL |
International Rectifier |
Power MOSFET |
|
| 4 | IRF1010ELPbF |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRF1010EPBF |
International Rectifier |
Power MOSFET |
|
| 6 | IRF1010ES |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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